DocumentCode

1031072

Title

Characterization of MOSFETs formed by gate masked ion implantation technique

Author

Bower, R.W. ; Dill, H.G. ; Aubuchon, K.G. ; Thompson, S.A.

Volume

15

Issue

6

fYear

1968

fDate

6/1/1968 12:00:00 AM

Firstpage

415

Lastpage

415

Keywords

Boron; Capacitance; Doping; Frequency response; Insulation; Ion implantation; MOSFETs; Silicon; Stability; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1968.16234

Filename

1475136