DocumentCode
1031162
Title
Bonding silicon wafer to silicon nitride with spin-on glass as adhesive
Author
Yamada, Akimasa ; Kawasaki, T. ; Kawashima, Mitsumasa
Author_Institution
Sumitomo Metal Mining Co. Ltd., Electronics Materials Laboratory, Tokyo, Japan
Volume
23
Issue
7
fYear
1987
Firstpage
314
Lastpage
315
Abstract
Using spin-on glass (SOG) as an adhesive, an Si wafer with thermal oxide was successfully bonded to one with an RF-sputtered Si3N4 film. This ensures that SOG films are effective in bonding Si wafers to less reactive surfaces than Si or SiO2 such as silicon nitride. It was also found that the previously reported bonding procedure can be simplified by suppressing the spin-induced radial striations of the SOG films.
Keywords
elemental semiconductors; field effect integrated circuits; semiconductor technology; silicon; silicon compounds; 3D IC technology; RF-sputtered Si3N4 film; SOG films; Si-Si3N4 wafer; Si-SiO2 wafer; bonding Si wafers; bonding procedure; spin-on glass as adhesive;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870233
Filename
4257561
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