• DocumentCode
    1031451
  • Title

    Self-aligned Si MESFETs fabricated in thin silicon-on-insulator films

  • Author

    Vu, D.P. ; Sono, A.

  • Author_Institution
    CNET-CNS, Meylan, France
  • Volume
    23
  • Issue
    7
  • fYear
    1987
  • Firstpage
    354
  • Lastpage
    355
  • Abstract
    Self-aligned Si MESFETs using tungsten for the gate have been fabricated in lamp-recrystallised silicon-on-insulator materials. Devices with gate lengths of 1.5¿m exhibit a DC transconductance of 7.5 mS/mm and a calculated cutoff frequency of 3.9GHz.
  • Keywords
    Schottky gate field effect transistors; VLSI; elemental semiconductors; field effect integrated circuits; silicon; 1.5 micron; 3.9 GHz; 7.5 mS; DC transconductance; MESFETs; Schottky gate electrode; VLSI; W-Si-SiO2; cutoff frequency; gate lengths; lamp recrystallised SOI films; self aligned devices; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870261
  • Filename
    4257589
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1031451