DocumentCode
1031518
Title
Electromigration effects in power MESFET rectifying and ohmic contacts
Author
Canali, Carlo ; Chiussi, F. ; Fantini, F. ; Umena, L. ; Vanzi, M.
Author_Institution
UniversitÃ\xa0 di Padova, Istituto di Electtrotecnica ed Elettronica, Padova, Italy
Volume
23
Issue
8
fYear
1987
Firstpage
364
Lastpage
365
Abstract
Both gate and source/drain electromigration are significant failure mechanisms in power MESFTs. The correlation between electromigration effects due to high current density and measured electrical degradation is investigated in devices of different technologies. A safety zone of operation for ohmic contact electromigration is defined.
Keywords
Schottky gate field effect transistors; electromigration; life testing; ohmic contacts; power transistors; rectification; reliability; semiconductor device testing; solid-state microwave devices; electrical degradation; electromigration; failure mechanisms; high current density; life testing; microwave devices; ohmic contacts; power MESFETs; rectifying contacts; reliability; safety zone;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870267
Filename
4257596
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