DocumentCode
1031805
Title
GaAs monolithic microwave integrated circuit trimming using laser-direct-written tungsten microstrip lines
Author
Chen, C.L. ; Black, J.G. ; Mahoney, L.J. ; Doran, S.P. ; Courtney, W.E. ; Ehrlich, D.J. ; Murphy, R.A.
Author_Institution
Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, USA
Volume
23
Issue
8
fYear
1987
Firstpage
402
Lastpage
403
Abstract
Laser-direct-write deposition of tungsten has been investigated as a technique for postfabrication trimming of GaAs monolithic microwave integrated circuits. Tungsten microstrip lines of 30 ¿¿ cm resistivity are deposited via a vapour-phase reaction induced by a focused argon-ion laser beam Lines of 1.8 ¿m thickness and 50¿m width written on a semi-insulating GaAs substrate have a loss of 2.6 dB/cm at 16GHz. This trimming technique is proposed as a practical and accurate method for the optimisation of high-frequency GaAs circuits.
Keywords
III-V semiconductors; integrated circuit technology; microwave integrated circuits; monolithic integrated circuits; strip lines; tungsten; vapour deposited coatings; 1.8 micron; 50 micron; GaAs; GaAs substrate; W; integrated circuit trimming; laser-direct-write deposition; microstrip lines; monolithic microwave integrated circuits; optimisation; postfabrication trimming; vapour-phase reaction;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870293
Filename
4257622
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