• DocumentCode
    1031861
  • Title

    Very low threshold graded-index separate-confinement-heterostructure strained InGaAsP single-quantum-well lasers

  • Author

    Yamamoto, Naoji ; Yokoyama, Kazuya ; Yamanaka, T. ; Yamamoto, Manabu

  • Author_Institution
    NTT Opto-Electron. Labs., Kanagawa
  • Volume
    30
  • Issue
    3
  • fYear
    1994
  • fDate
    2/3/1994 12:00:00 AM
  • Firstpage
    243
  • Lastpage
    244
  • Abstract
    A low threshold current density of ~100 A/cm2 has been obtained at 1.55 μm using a graded-index separate-confinement-heterostructure strained InGaAsP single-quantum-well laser. The design of the laser structure is based on results calculated from the viewpoint of effective carrier injection into the well
  • Keywords
    III-V semiconductors; current density; gallium arsenide; gradient index optics; indium compounds; semiconductor lasers; 1.55 micron; GRINSCH; InGaAsP; design; effective carrier injection; laser structure; low threshold current density; very low threshold graded-index separate-confinement-heterostructure strained InGaAsP single-quantum-well lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940137
  • Filename
    267215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1031861