DocumentCode
1032038
Title
Effect of Coulomb interaction on calculated interband gain in ZnSe
Author
Zheng, J.-Z.
Author_Institution
Dept. of Phys. & Astron., St. Andrews Univ.
Volume
30
Issue
3
fYear
1994
fDate
2/3/1994 12:00:00 AM
Firstpage
224
Lastpage
225
Abstract
The optical gain for band-to-band transitions at room temperature in ZnSe and GaAs has been calculated with and without electron-hole Coulomb interaction. The Coulomb enhancement of maximum gain is substantial for ZnSe: the nominal current density at threshold is also increased
Keywords
II-VI semiconductors; band structure of crystalline semiconductors and insulators; current density; excitons; laser theory; semiconductor lasers; zinc compounds; Coulomb enhancement; Coulomb interaction; GaAs; ZnSe; band-to-band transitions; current density; electron-hole Coulomb interaction; excitonic enhancement; interband gain; optical gain; room temperature; threshold;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940152
Filename
267228
Link To Document