• DocumentCode
    1032431
  • Title

    Low-threshold GaAs/GaAlAs buried heterostructure laser with an ion-beam-etched quarter ring cavity

  • Author

    Sansonetti, Pierre ; Riboth, H. ; Brandon, J. ; Menigaux, L. ; Dugrand, L. ; Bouadma, N.

  • Author_Institution
    Centre National d´Etudes des Télécommunications, Laboratoire de Bagneux, Bagneux, France
  • Volume
    23
  • Issue
    10
  • fYear
    1987
  • Firstpage
    485
  • Lastpage
    487
  • Abstract
    GaAs/GaAlAs buried quarter ring lasers with a constant stripe shape along the cavity were fabricated by ion beam etching. Threshold currents of 23 mA were obtained for 2 ¿m-wide and 430 ¿m-long cavities on a wafer, for which the broad-area threshold current density was l.7 kA/cm2. This structure leaves the rest of the wafer free for optoelectronic integration.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; laser cavity resonators; ring lasers; semiconductor junction lasers; sputter etching; 23 mA; GaAs-GaAlAs buried heterostructure laser; broad-area threshold current density; constant stripe shape; ion-beam-etched quarter ring cavity; optoelectronic integration; semiconductor laser; threshold currents;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870353
  • Filename
    4257684
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1032431