DocumentCode

1032442

Title

Double-diffused high-speed Ge transistors

Author

Gansauge, P.

Volume

15

Issue

6

fYear

1968

fDate

6/1/1968 12:00:00 AM

Firstpage

438

Lastpage

438

Keywords

Boron; Delay; Ferrites; Insertion loss; Packaging; Plasma applications; Plasma devices; Plasma temperature; Thermal conductivity; Varactors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1968.16364

Filename

1475266