• DocumentCode
    1032481
  • Title

    Pressure dependence of threshold current and carrier lifetime in 1.55 μm GaInAsP lasers

  • Author

    Heasman, K.C. ; Adams, A.R. ; Greene, P.D. ; Henshall, G.D.

  • Author_Institution
    University of Surrey, Department of Physics, Guildford, UK
  • Volume
    23
  • Issue
    10
  • fYear
    1987
  • Firstpage
    492
  • Lastpage
    493
  • Abstract
    The threshold current and carrier lifetime were measured as a function of pressure in oxide stripe and IRW GaxIn1-xAsyP1-y 1.55 μm lasers. The results indicate that intervalence band absorption is a more important loss mechanism than the combined effects of Auger recombination, loss over the barrier and recombination through defects.
  • Keywords
    III-V semiconductors; carrier lifetime; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; 1.55 micron; Auger recombination; GaInAsP laser; carrier lifetime; defect recombination; intervalence band absorption; inverted rib waveguide laser; loss mechanism; oxide stripe laser; pressure dependence; semiconductor laser; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870357
  • Filename
    4257688
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1032481