20 Gbit/s, 1.55 μm strained-InGaAsP MQW modulator integrated DFB laser module

Author

Wakita, Ken ; Sato, Kiminori ; Kotaka, I. ; Yamamoto, Manabu ; Kataoka, Takeshi

Author_Institution

NTT Opto-Electron. Labs., Kanagawa

Volume

30

Issue

4

fYear

1994

fDate

2/17/1994 12:00:00 AM

Firstpage

302

Lastpage

303

Abstract

The high-speed (20 Gbit/s) and highly efficient (2 V peak to peak for a 22 dB on/off ratio) operation of an MQW integrated electroabsorption modulator/DFB laser module is demonstrated. Output power from the module is over +3 dBm in the pigtailed singlemode fibre. To the authors´ knowledge, this is the first report of 20 Gbit/s operation with a monolithically integrated light source

Keywords

III-V semiconductors; distributed feedback lasers; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; optical communication equipment; optical modulation; semiconductor lasers; semiconductor quantum wells; 1.55 mum; 2 V; 20 Gbit/s; 20 Gbit/s operation; DFB laser module; InGaAsP; InGaAsP MQW modulator; MQW integrated electroabsorption modulator/DFB laser module; direct detection optical transmission systems; high-speed operation; highly efficient operation; low driving voltage; monolithically integrated light source; output power; pigtailed singlemode fibre; small signal frequency response;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19940036

Filename

267294