• DocumentCode
    1032705
  • Title

    Examination of intervalence band absorption and its reduction by strain in 1.55 μm compressively strained InGaAs/InP laser diodes

  • Author

    Ring, W.S.

  • Author_Institution
    Dept. of Phys., Dublin City Univ.
  • Volume
    30
  • Issue
    4
  • fYear
    1994
  • fDate
    2/17/1994 12:00:00 AM
  • Firstpage
    306
  • Lastpage
    308
  • Abstract
    Reduction of intervalence band absorption found in highly strained semiconductor lasers is dominated by enhancement in the TE gain spectrum due to the inclusion of compressive strain in the active layer and not by a change in the S-like character of the spin-orbit band
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser transitions; semiconductor lasers; valence bands; 1.55 micron; InGaAs-InP; InGaAs/InP laser diodes; TE gain spectrum; active layer; compressive strain; compressively strained; highly strained semiconductor lasers; intervalence band absorption;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940225
  • Filename
    267297
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1032705