DocumentCode
1032772
Title
High-reflectivity GeSi/Si asymmetric Bragg reflector at 0.8 μm
Author
Murtaza, Shafaq ; Campbell, Joe ; Bean, J.C. ; Peticolas, L.J.
Author_Institution
Microelectron. Res. Center, Texas Univ., Austin, TX
Volume
30
Issue
4
fYear
1994
fDate
2/17/1994 12:00:00 AM
Firstpage
315
Lastpage
316
Abstract
A high reflectivity GeSi/Si Bragg mirror centred at 800 nm is reported. The increased absorption in the GeSi layers at this wavelength is found to be more than compensated for by the increased refractive index step available. Agreement with simulations is excellent. This mirror can be used to fabricate a high quantum efficiency, high speed resonant cavity photodiode
Keywords
Ge-Si alloys; distributed Bragg reflector lasers; elemental semiconductors; integrated optics; integrated optoelectronics; laser cavity resonators; mirrors; optical resonators; photodetectors; photodiodes; reflectivity; refractive index; semiconductor materials; silicon; 800 nm; GeSi-Si; GeSi/Si Bragg mirror; asymmetric Bragg reflector; high quantum efficiency; high speed photodiode; high-reflectivity mirror; refractive index step; resonant cavity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940205
Filename
267304
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