DocumentCode
1032961
Title
Accuracy of Fabry-Perot method of semiconductor laser gain measurement
Author
El Mashade, M.B. ; Arnaud, Jerome
Author_Institution
USTL, Equipe de Microoptoélectronique de Montpellier, CNRS UA 392, Montpellier, France
Volume
23
Issue
11
fYear
1987
Firstpage
568
Lastpage
570
Abstract
The Fabry¿Perot (FP) method of semiconductor laser gain measurement, first proposed by Hakki and Paoli (1975), is widely used. It is based on the measurement of the FP resonances excited by spontaneous emission. Its validity rests on the assumption that a single mode is significant. We show, using a simplified laser model, that this assumption is valid only when the power mirror reflectivity is very small, or near the laser oscillating frequency. For example, the error is in the order of 20% when the power facet reflectivities are equal to 37% and the modal gain is unity. These results apply to both index-guided and gain-guided lasers.
Keywords
gain measurement; laser cavity resonators; laser modes; laser theory; semiconductor junction lasers; FP resonances; Fabry-Perot method; facet reflectivities; gain-guided lasers; index guided lasers; laser oscillating frequency; modal gain; power mirror reflectivity; semiconductor laser gain measurement; simplified laser model; single mode; spontaneous emission;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870407
Filename
4257739
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