DocumentCode
1032972
Title
Effect of facet coatings on far fields of semiconductor lasers
Author
Ohtoshi, T.
Author_Institution
Hitachi Ltd., Central Research Laboratory, Kokubunji, Japan
Volume
23
Issue
11
fYear
1987
Firstpage
570
Lastpage
571
Abstract
A theoretical expression is derived for the far fields of semiconductor lasers with coated facets. It is shown that the far fields are different for uncoated, antireflection-coated and high-reflection-coated lasers. The correction factor for the far fields is shown to depend on the transmission coefficient of the facets.
Keywords
antireflection coatings; coatings; laser cavity resonators; semiconductor junction lasers; antireflection coated lasers; coated facets; correction factor; facet coatings; far fields; high-reflection-coated lasers; semiconductor lasers; transmission coefficient; uncoated lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870408
Filename
4257740
Link To Document