p-type modulation-doped AlGaAs/GaAs heterostructures grown by atmospheric-pressure metal organic vapour phase epitaxy (MOVPE)

Author

Roberts, J.S. ; Woodhead, J. ; Mistry, P. ; Singh, K.C. ; Sotomayor-Torres, C.M.

Author_Institution

University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK

Volume

23

Issue

11

fYear

1987

Firstpage

605

Lastpage

606

Abstract

Atmospheric-pressure MOVPE has been used to prepare unintentionally doped Al0.6Ga0.4As/GaAs heterostructures which support a high-quality two-dimensional hole gas (2-DHG). p-type doping of the Al0.6Ga0.4As layer was achieved with the residual carbon background characteristic of the trimethylaluminium precursor. A hole concentration of 1.55 (Â±0.15) Ã— 1012cmÂ¿2 has been measured by both the quantum Hall effect and Van der Pauw measurement with a mobility up to 6000cm2 VÂ¿1sÂ¿1 at 2K. Parallel conduction has been eliminated from the structure by incorporating an n-type Al0.45Ga0.55As buffer rather than a similar layer unintentionally doped p-type.

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; gallium compounds; high electron mobility transistors; semiconductor growth; vapour phase epitaxial growth; 2 K; 2-DHG; AlGaAs-GaAs; Van der Pauw measurement; atmospheric pressure MOVPE; hole concentration; hole mobility; metal organic vapour phase epitaxy; modulation doped heterostructures; p-type; quantum Hall effect; trimethylaluminium precursor; two-dimensional hole gas; unintentionally doped;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19870433

Filename

4257765