• DocumentCode
    1033266
  • Title

    Noise in epitaxial silicon bulk unipolar diodes

  • Author

    Werres, C. ; Vescan, L. ; Beneking, H.

  • Author_Institution
    Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
  • Volume
    23
  • Issue
    12
  • fYear
    1987
  • Firstpage
    613
  • Lastpage
    614
  • Abstract
    Silicon camel diodes with barrier heights in the range 0.46¿0.94 eV were realised by means of low-pressure vapour phase epitaxy (LPVPE). These diodes show a conversion loss as low as 4.2 dB at 2 GHz and a noise figure of 4.8 dB.
  • Keywords
    electron device noise; elemental semiconductors; semiconductor diodes; silicon; solid-state microwave devices; vapour phase epitaxial growth; 0.46 to 0.94 eV; 2 GHz; 4.2 dB; LPVPE; Si; VPE growth; barrier heights; bulk unipolar diodes; camel diodes; conversion loss; elemental semiconductors; low-pressure vapour phase epitaxy; solid state microwave devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870439
  • Filename
    4257772
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1033266