DocumentCode
1033468
Title
Low-drive-current, high-efficiency AlGaAs/GaAs SQW laser
Author
Nobuhara, H. ; Fujii, Teruya ; Wada, O.
Author_Institution
Fujitsu Laboratories, Atsugi, Japan
Volume
23
Issue
12
fYear
1987
Firstpage
645
Lastpage
647
Abstract
A low-drive-current AlGaAs/GaAs SQW laser, which exhibits extremely low threshold currents of 2.8 mA at room temperature and 0.35 mA at 77 K together with high differential efficiencies of 0.75 mW/mA/facet, has been demonstrated. Experimental results of the effect of both the mirror reflectivity and the cavity length on reducing the threshold current of the SQW lasers have indicated the feasibility of submilliampere lasing at room temperature.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; 0.35 mA; 2.8 mA; 77 K; AlGaAs-GaAs; III-V semiconductors; SQW lasers; cavity length; differential efficiencies; low-drive-current; mirror reflectivity; room temperature; single quantum well laser; submilliampere lasing; threshold currents;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870461
Filename
4257794
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