DocumentCode
1033504
Title
Purification and preparation of TlBr crystals for room temperature radiation detector applications
Author
Oliveira, Icimone B. ; Costa, Fáabio E. ; Chubaci, Josée F D ; Hamada, Margarida M.
Author_Institution
IPEN/CNEN-SP, Sao Paulo, Brazil
Volume
51
Issue
3
fYear
2004
fDate
6/1/2004 12:00:00 AM
Firstpage
1224
Lastpage
1228
Abstract
Thallium bromide (TlBr) is a semiconductor compound with a high atomic number and a wide bandgap, being a very promising material to be used as room temperature radiation detectors. In this work, commercial TlBr powder was used for growing crystals for detector applications. To reduce impurities, this material was purified by the zone refining technique. Trace impurities at ppb/ppm level were analyzed using inductively coupled plasma mass spectroscopy (ICP-MS). The efficiency of the purification was evaluated through studies of the decrease impurities concentrations in the TlBr powder and in the purified materials. The crystal quality was verified by X-ray diffraction (XRD). To evaluate the crystal as a semiconductor detector, systematic measurements of the transmittance, resistivity, and the radiation response (241Am, 57Co, 125I, and 133Ba) gamma rays were carried out.
Keywords
X-ray diffraction; crystal growth; crystal purification; gamma-ray detection; mass spectroscopy; plasma diagnostics; radioactive sources; semiconductor counters; solid scintillation detectors; thallium compounds; wide band gap semiconductors; zone refining; 293 to 298 K; 125I; 133Ba; 241Am; 57Co; ICP-MS; TlBr; TlBr crystal preparation; TlBr crystal purification; TlBr powder; X-ray diffraction; XRD; crystal growth; crystal quality; impurities concentrations; inductively coupled plasma mass spectroscopy; purified materials; radiation response gamma rays; resistivity; room temperature radiation detector applications; semiconductor detector; thallium bromide; transmittance; wide bandgap; zone refining technique; Atomic measurements; Crystalline materials; Crystals; Plasma measurements; Plasma temperature; Powders; Purification; Radiation detectors; Semiconductor impurities; Semiconductor materials; Thallium bromide; TlBr; crystal growth; radiation detector; zone refining;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2004.829383
Filename
1312045
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