• DocumentCode
    1033836
  • Title

    Low-loss single-mode InP/InGaAsP waveguides grown by MOVPE

  • Author

    McIlroy, P.W.A. ; Rodgers, P.M. ; Singh, J.S. ; Spurdens, P.C. ; Henning, I.D.

  • Author_Institution
    British Telecom Research Laboratories, Ipswich, UK
  • Volume
    23
  • Issue
    13
  • fYear
    1987
  • Firstpage
    701
  • Lastpage
    703
  • Abstract
    Losses as low as 0.4 ± 0.1 dB/cm for TE- and 0.65 ± 0.1 dB/ cm for TM-polarised light have been observed in tightly confined single-mode InP/lnGaAsP waveguides grown by MOVPE and processed using RIE. These are the lowest losses reported for InP-based waveguides. The structure could be used to make low-loss modulators for communications wavelengths.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical losses; optical modulation; optical waveguides; semiconductor growth; vapour phase epitaxial growth; 0.4 dB; 0.65 dB; III-V semiconductor TE-polarised light; InP-InGaAsP; MOVPE; RIE; TM-polarised light; communications wavelengths; integrated optics; low-loss modulators; optical waveguides; single-mode; vapour phase epitaxial growth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870499
  • Filename
    4257833
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1033836