DocumentCode
1033874
Title
Gunn effect bibliography
Author
Gaylord, Thomas K. ; Shah, Pradeep L. ; Rabson, Thomas A.
Author_Institution
Rice University, Houston, Tex.
Volume
15
Issue
10
fYear
1968
fDate
10/1/1968 12:00:00 AM
Firstpage
777
Lastpage
788
Abstract
In view of the rapidly expanding interest and activity in the area of the Gunn effect, the following bibliography has been compiled for people who are studying or doing research in this area. The term "Gunn effect" is used, in general, to collectively describe a number of classes of bulk negative resistance behavior in semiconductors with energy band structures like that of GaAs. These modes of behavior include small-signal amplification, pure accumulation of space charge, mature dipole (true Gunn effect) mode. quenched accumulation (LSA) mode, and quenched dipole mode. These references deal with the theory, experimental results, and applications of the Gunn effect. Works of a fundamental nature concerning phenomena that are basic to all semiconductor behavior and other bulk negative resistance effects have not been included. Also, basic papers dealing with electron transport phenomena, such as hot electron theory and intervalley scattering, which are essential to a complete understanding of the Gunn effect and articles on the properties and band structure of GaAs, InP, CdTe, and other III-V compounds have not generally been included, although in certain cases they are listed if they have been frequently cited. As in the compilation of any bibliography, it is self-evident that some valuable and pertinent articles may have been overlooked.
Keywords
Bibliographies; Conductivity; Electric breakdown; Electrons; Gallium arsenide; Germanium; Gunn devices; III-V semiconductor materials; Semiconductor diodes; Solids;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1968.16514
Filename
1475416
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