• DocumentCode
    1033988
  • Title

    Fully implanted GaAs millimetre-wave mixer diode using high energy implantation

  • Author

    Thompson, Paul ; Dietrich, H. ; Anand, Y. ; Higgins, V. ; Hillson, J.

  • Author_Institution
    Naval Research Laboratory, Washington, USA
  • Volume
    23
  • Issue
    14
  • fYear
    1987
  • Firstpage
    725
  • Lastpage
    727
  • Abstract
    Fully implanted GaAs millimetre-wave planar mixer diodes, suitable for monolithic integration, have been fabricated and tested. Multiple energy implantation, having a maximum energy of 6 MeV, was used to form the 3 ¿m-thick active layer. The DC and RF characteristics were comparable to state-of-the-art GaAs mixer diodes fabricated on epitaxial layers.
  • Keywords
    III-V semiconductors; gallium arsenide; ion implantation; mixers (circuits); semiconductor diodes; solid-state microwave devices; 6 MeV; DC characteristics; GaAs; RF characteristics; active layer; high energy implantation; millimetre-wave mixer diode; monolithic integration;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870515
  • Filename
    4257850
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1033988