Excellent ferroelectricity of thin poly(vinylidene fluoride-trifluoroethylene) copolymer films and low voltage operation of capacitors and diodes

Author

Fujisaki, Sumiko ; Fujisaki, Yoshihisa ; Ishiwara, Hiroshi

Author_Institution

Tokyo Inst. of Technol., Yokohama

Volume

54

Issue

12

fYear

2007

fDate

12/1/2007 12:00:00 AM

Firstpage

2592

Lastpage

2594

Abstract

Characteristics of metal-ferroelectrics-metal (MFM) capacitors and metal-ferroelectrics-insulator-semi-conductor (MFIS) diodes with poly(vinylidene fluoride-trifiuoroethylene) [P(VDF-TrFE)] copolymer films thinner than 100 nm were investigated. The films were prepared by spin-cast process and were annealed at 140degC in air for crystallization. The ferroelectric properties are equivalent to those of oxide ferroelectrics, even under low voltage or high frequency operation.

Keywords

MFIS structures; annealing; capacitors; casting; crystallisation; diodes; ferroelectric thin films; field effect transistors; polymer blends; polymer films; annealing; crystallization; ferroelectric field effect transistor; ferroelectric thin copolymer films; metal-ferroelectrics-insulator-semiconductor diodes; metal-ferroelectrics-metal capacitors; poly(vinylidene fluoride-trifluoroethylene); spin-cast process; Annealing; Capacitors; Dielectrics and electrical insulation; Diodes; Ferroelectric films; Ferroelectric materials; Flash memory; Low voltage; Magnetic force microscopy; Polarization;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/TUFFC.2007.583

Filename

4430047