Use of surface passivation ledges and local negative feedback to reduce amplitude modulation noise in AlGaAs/GaAs heterojunction bipolar transistors

Author

Costa, Damian ; Khatibzadeh, Ali

Author_Institution

Central Res. Labs., Texas Instrum. Inc., Dallas, TX, USA

Volume

4

Issue

2

fYear

1994

Firstpage

45

Lastpage

47

Abstract

It is shown that the use of surface passivation ledges and local negative feedback with an unbypassed emitter resistance reduce the AM noise of AlGaAs/GaAs heterojunction bipolar transistors (HBT´s). The simultaneous use of both techniques improves the AM noise by 9 dB at 100 Hz offset. The correspondence between reductions in baseband noise and AM noise are described.<>

Keywords

III-V semiconductors; aluminium compounds; amplitude modulation; feedback; gallium arsenide; heterojunction bipolar transistors; passivation; semiconductor device noise; solid-state microwave devices; AM noise reduction; AlGaAs-GaAs; HBT; amplitude modulation noise; baseband noise; heterojunction bipolar transistors; local negative feedback; surface passivation ledges; unbypassed emitter resistance; Amplitude modulation; Circuit noise; Gallium arsenide; Heterojunction bipolar transistors; Negative feedback; Noise level; Noise measurement; Noise reduction; Passivation; Surface resistance;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.267712

Filename

267712