DocumentCode
1034864
Title
An improved model for the slewing behavior of opamps
Author
Wang, Feng ; Harjani, Ramesh
Author_Institution
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Volume
42
Issue
10
fYear
1995
fDate
10/1/1995 12:00:00 AM
Firstpage
679
Lastpage
681
Abstract
A new time-domain model for the slewing behavior of two-stage opamps is presented. This model includes the effects of the load capacitance, compensation capacitance, device sizes and the nonlinear behavior of the transistors during the slewing period. This model improves on the commonly used constant current models and allows for more predictable designs. The model shows good agreement with simulations. Circuit design results using the traditional and new improved models are presented
Keywords
capacitance; integrated circuit design; integrated circuit modelling; operational amplifiers; time-domain analysis; circuit design; compensation capacitance; device sizes; load capacitance; nonlinear behavior; slewing behavior model; time-domain model; two-stage opamps; Capacitance; Circuit simulation; Circuit synthesis; Equations; Predictive models; Signal analysis; Switching circuits; Switching converters; Time domain analysis; Voltage;
fLanguage
English
Journal_Title
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
Publisher
ieee
ISSN
1057-7130
Type
jour
DOI
10.1109/82.471400
Filename
471400
Link To Document