• DocumentCode
    1035252
  • Title

    GaAs lateral bipolar transistor with field-separated carriers

  • Author

    Ueda, Daisuke ; Takagi, Hiroyuki ; Kano, G. ; Teramoto, I.

  • Author_Institution
    Matsushita Electronics Corporation, Electronics Research Laboratory, Takatsuki, Japan
  • Volume
    23
  • Issue
    17
  • fYear
    1987
  • Firstpage
    899
  • Lastpage
    900
  • Abstract
    A new type of GaAs lateral bipolar transistor has been developed by introducing an n-i-p-i-n structure where the electric field is applied perpendicular to the direction of carrier injection in order for the carriers to be separated. The diffusion length is increased owing to the increase of lifetime due to the spatial separation of injected carriers, resulting in the increase of current gain.
  • Keywords
    III-V semiconductors; bipolar transistors; gallium arsenide; GaAs; III-V semiconductors; carrier injection; current gain increase; diffusion length; field-separated carriers; lateral bipolar transistor; lifetime; n- i- p- i- n structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870635
  • Filename
    4257973
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1035252