DocumentCode

1035949

Title

MONOS memory element

Author

Lin, H.C.

Volume

16

Issue

2

fYear

1969

fDate

2/1/1969 12:00:00 AM

Firstpage

258

Lastpage

258

Keywords

Absorption; FETs; Laboratories; MONOS devices; MOSFET circuits; Paramagnetic materials; Quantization; Semiconductor device noise; Thermal resistance; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1969.16730

Filename

1475772