Epitaxial Growth of SrM(00 $l$ ) Film on Au(111)

Strontium ferrite (SrFe₁₂O₁₉) thin films have been deposited on thermally oxidized silicon wafer with Au underlayer by using DC magnetron sputtering system. Crystallization of the strontium hexaferrite phase on Au underlayer is achieved for deposition temperature as low as 475degC. The intensity of (111) diffraction line for Au and that of (00l) diffraction line for strontium ferrite decreases with increasing substrate temperature of underlayer. The maximum of coercivity and remanent squareness ratio in perpendicular direction are 5.7 kOe and 0.86, respectively, at substrate temperature of underlayer of 200degC.