• DocumentCode
    1036304
  • Title

    Epitaxial, thermodynamically stabilised metal/III-V compound semiconductor interface: NiGa on GaAs (001)

  • Author

    Guivarc´h, A. ; Guerin, Roch ; Secoue, M.

  • Author_Institution
    Centre National d´Etudes des Télécommunications, LAB/ICM/MPA, Lannion, France
  • Volume
    23
  • Issue
    19
  • fYear
    1987
  • Firstpage
    1004
  • Lastpage
    1005
  • Abstract
    Crystalline thin films of the intermetallic compound NiGa have been grown by molecular beam epitaxy (MBE) on GaAs (001) substrate. The epitaxied NiGa films are chemically stable and continuous up to at least 500°C and present a resistivity of 10 ¿¿ cm, quite equivalent to that of the best silicide thin films.
  • Keywords
    III-V semiconductors; gallium alloys; gallium arsenide; metallisation; molecular beam epitaxial growth; nickel alloys; semiconductor-metal boundaries; 1E-5 ohmcm; 500 C; GaAs; III-V semiconductors; MBE; NiGa conductive films; NiGa metallisation; NiGa-GaAs; intermetallic compound NiGa; molecular beam epitaxy; stabilised metal/III-V compound semiconductor interface;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870704
  • Filename
    4258938
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1036304