A technique for directly plotting the inverse doping profile of semiconductor wafers

A new technique for plotting doping profiles of semiconductor wafers is described. This technique involves driving a Schottky diode deposited on the surface with a small constant RF current (a few hundred microamperes at 5 MHz). The depth of the depletion layer is varied by changing the dc bias, but this is the only role of the dc voltage. The inverse doping profile n^-1(x) is obtained by monitoring the voltage across the diode at the fundamental frequency, which is proportional to the depth x, and the second harmonic voltage, which is proportional to n^-1. This type of plotter has the advantages of simplicity, high resolution (limited only by the Debye length in most cases), immediate results, and economy.