• DocumentCode
    1036519
  • Title

    Integration of GaAS MESFET drivers with GaAs directional-coupler electro-optic modulators

  • Author

    Abeles, J.H. ; Chan, W.K. ; Shokoohi, F.K. ; Bhat, R. ; Koza, M.A.

  • Author_Institution
    Bell Communications Research, Red Bank, USA
  • Volume
    23
  • Issue
    20
  • fYear
    1987
  • Firstpage
    1037
  • Lastpage
    1038
  • Abstract
    We demonstrate the first integration of active electronic devices with semiconductor waveguide modulators. By combining ion-implanted GaAs MESFET amplifiers with directional-coupler electro-optic modulators, the DC drive voltage has been reduced by a factor of ¿v = 9, making an effective electro-optic figure-of-merit ¿vn3r41 for GaAs superior to that of LiNbO3
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; directional couplers; electro-optical devices; gallium arsenide; integrated optics; integrated optoelectronics; optical modulation; optical waveguide components; DC drive voltage; GaAs; MESFET amplifiers; directional-coupler electro-optic modulators; electro-optic figure-of-merit; integrated optoelectronics; semiconductor waveguide modulators;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870725
  • Filename
    4258962