• DocumentCode
    1037313
  • Title

    A GaAs avalanche diode analysis and an approximate indirect measurement of hole saturation velocity

  • Author

    Kim, Chung K.

  • Author_Institution
    Raytheon Co., Murray Hill, N.J.
  • Volume
    16
  • Issue
    11
  • fYear
    1969
  • fDate
    11/1/1969 12:00:00 AM
  • Firstpage
    917
  • Lastpage
    922
  • Abstract
    GaAs avalanche diodes are observed to operate at frequencies considerably lower than those of Si or Ge diodes with similar doping profiles and dc characteristics. This observed behavior and the analysis shown in this paper enable us to evaluate an approximate hole saturation velocity in GaAs. Small signal impedances and Q\´s of GaAs avalanche diodes with breakdown voltages of 17, 36, and 58 are calculated based on the approximated hole saturation velocity of 2 \\times 10^{6} cm/s. The model assumes an abrupt p+-n junction, e.g., zinc diffusion on n-type material, and a realistic electric field in the space-charge region.
  • Keywords
    Charge carrier processes; Diodes; Doping profiles; Electron mobility; Frequency; Gallium arsenide; Impedance; Ionization; Velocity measurement; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1969.16881
  • Filename
    1475923
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1037313