DocumentCode
1037514
Title
Current crowding on metal contacts to planar devices
Author
Murrmann, Helmuth ; Widmann, Dietrich
Author_Institution
Siemens Aktiengesellschaft, München, Germany
Volume
16
Issue
12
fYear
1969
fDate
12/1/1969 12:00:00 AM
Firstpage
1022
Lastpage
1024
Abstract
A simple transmission line model is applied to the contact region between metal and diffusion layer in planar devices. Taking into account the sheet resistance of the diffusion layer and an ohmic specific contact resistance between metal and semiconductor the theoretical current distribution across the contact is calculated and compared with the results obtained with a model suggested by Kennedy and Murley. Experimental data are given that confirm the validity of the transmission line model.
Keywords
Conductivity; Contact resistance; Current density; Current distribution; Distributed parameter circuits; Electric resistance; Mathematical model; Proximity effect; Solid modeling; Transmission line theory;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1969.16904
Filename
1475946
Link To Document