DocumentCode
1037933
Title
Extensions of the small-signal theory of negative resistance in gallium arsenide
Author
Schelonka, E.P.
Volume
17
Issue
2
fYear
1970
fDate
2/1/1970 12:00:00 AM
Firstpage
172
Lastpage
173
Abstract
The small-signal model for the Gunn effect proposed by Englemann and Quate is revised to include the effects of average mobility of the two-valley system in the expressions for carrier velocity as a function of electric field. The dispersion relation is then rederived, and computed results consistent with experimental observations are shown.
Keywords
Boron; Capacitance measurement; Capacitance-voltage characteristics; Conductivity; Diodes; Gallium arsenide; Gold; Silicon; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1970.16948
Filename
1476132
Link To Document