• DocumentCode
    1038002
  • Title

    Appearance of a Tunneling Spectrum Peak by Electrical Breakdown of Tunneling Junction

  • Author

    Horikiri, Kouhei ; Shiiki, Kazuo

  • Author_Institution
    Dept. of Appl. Phys. & Physico-Inf., Keio Univ., Yokohama
  • Volume
    44
  • Issue
    11
  • fYear
    2008
  • Firstpage
    2589
  • Lastpage
    2591
  • Abstract
    Inelastic electron tunneling spectra of metal/AlO x/metal junctions were measured at 77 K. For as-made samples up to 0.3 V, the only observable peak occurred near 0.04 V. After electrical breakdown induced both by a ramped voltage stress and by a constant voltage stress, a peak appeared near 0.09 V. It is thought that a conduction level, which is about 0.09 eV higher than the Fermi level, was created in AlOx by the electrical breakdown. The breakdown is not thought to be due to a simple short circuit caused by a pinhole or the like.
  • Keywords
    electric breakdown; tunnelling; tunnelling spectroscopy; Fermi level; constant voltage stress; electrical breakdown; inelastic electron tunneling spectra; ion-beam sputtering; ramped voltage stress; temperature 77 K; thermal oxidation; tunneling junction; tunneling spectroscopy; tunneling spectrum peak; AlOx; electrical breakdown; ion-beam sputtering; thermal oxidation; tunneling junction; tunneling spectroscopy;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2008.2003041
  • Filename
    4717507