Superconductive tunneling device characteristics for array application

Experimental data are presented for superconductive tunneling devices (STD) of varied geometrical design. The devices exhibited stable characteristics since they were formed by plasma-induced oxidation of Pb films in conjunction with existent array fabrication technology previously developed for cryotrons. The dependence of the tunneling supercurrent has been measured as a function of barrier perimeter and applied magnetic field. This field is generated by in-line and crossed-film control layers matched to the geometrical dimensions of the barriers. Control of device geometry is shown to yield the unbiased current gain desired for logic and memory applications. The results reported form an empirical basis for arrayed-device design. A cautiously optimistic review of the state-of-the-art in STD technology is included.