DocumentCode
1038059
Title
Room-temperature CW operation of MBE-grown GaInAs/AlInAs mow lasers in 1.5μm range
Author
Matsushima, Y. ; Utaka, K. ; Sakai, Kenji ; Takeuchi, O.
Author_Institution
KDD Meguro R&D Laboratories, Tokyo, Japan
Volume
23
Issue
24
fYear
1987
Firstpage
1271
Lastpage
1273
Abstract
We report the first successful room-temperature CW operation of GaInAs/AlInAs multiquantum-well (MQW) injection lasers fabricated by molecular beam epitaxy (MBE). The emitting wavelength and threshold current were 1.57 μm and 530 mA, respectively, for an SiN-defined stripe laser with a 12 μm-wide, 600 μm-long cavity.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical communication equipment; semiconductor junction lasers; 1.57 micron; 12 micron; 530 mA; 600 micron; GaInAs-AlInAs lasers; MBE; MQW lasers; SiN film; SiN-defined stripe laser; cavity; emitting wavelength; injection lasers; molecular beam epitaxy; multiquantum-well; room-temperature CW operation; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870882
Filename
4259123
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