DocumentCode
1038154
Title
Resonance and parametric effects in IMPATT diodes
Author
Harth, Wolfgaxg
Author_Institution
Institut für Hochfrequenztechnik, Technische Universität Braunschweig, West Germany
Volume
17
Issue
4
fYear
1970
fDate
4/1/1970 12:00:00 AM
Firstpage
282
Lastpage
289
Abstract
The theory of nonlinear fundamental and subharmonic resonances in the avalanche region of IMPATT diodes is developed by use of the method of harmonic balance. Due to the high resonance strength of the subharmonic mode, and as a consequence of large-signal parametric interaction, the negative resistance of the diode is markedly increased at the presence of a self-pumped oscillation of twice the frequency of the fundamental mode, especially for low-transit angles across the drift region.
Keywords
Avalanche breakdown; Carrier confinement; Current density; Diodes; Electric fields; Frequency conversion; Ionization; Oscillators; Resonance; Tuning;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1970.16971
Filename
1476155
Link To Document