DocumentCode
1038222
Title
A generalized analytical theory of the response of a photoconductor
Author
Said, M.Sameh ; Taylor, M. Gene
Author_Institution
University of Pennsylvania, Philadelphia, Pa.
Volume
17
Issue
4
fYear
1970
fDate
4/1/1970 12:00:00 AM
Firstpage
336
Lastpage
341
Abstract
In this work a theoretical model is derived for predicting the response of a photoconductor. This model takes into account direct recombination, surface recombination, recombination through traps (for the two limiting cases of high- and low-trap effect), Auger-type processes, and diffusion effect. Complete solutions are obtained for both steady-state and transient conditions for these various cases.
Keywords
Artificial intelligence; Charge carrier lifetime; Charge carrier processes; Electron traps; Indium; Photoconductivity; Radiative recombination; Silicon; Spontaneous emission; Steady-state;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1970.16977
Filename
1476161
Link To Document