• DocumentCode
    1038621
  • Title

    MOVPE studies for the development of GaInAsP/InP lasers with semi-insulating InP blocking layers

  • Author

    Speier, P. ; Wunstel, K. ; Tegude, F.J.

  • Author_Institution
    SEL, Research Centre, Optoelectronic Components Division, Stuttgart, West Germany
  • Volume
    23
  • Issue
    25
  • fYear
    1987
  • Firstpage
    1363
  • Lastpage
    1364
  • Abstract
    The self-aligned selective regrowth of a GalnAsP/lnP BH laser with semi-insulating InP:Fe by atmospheric-pressure MOVPE is reported. A threshold current of 26 mA and 12mW output power at 100mA are obtained. Very low capacitance values of 3¿5 pF are measured, promising excellent high-frequency performance.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; semiconductor technology; vapour phase epitaxial growth; 12 mW; 26 mA; 3 to 5 pF; BH laser; GaInAs-InP lasers; InP:Fe; atmospheric-pressure MOVPE; capacitance; output power; self-aligned selective regrowth; semi-insulating InP blocking layers; semi-insulating InP:Fe; semiconductors; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870941
  • Filename
    4259183
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1038621