DocumentCode
1039477
Title
Filamentary injection currents in semi-insulating GaAs
Author
Bowers, Harold C. ; Barnett, Allen M.
Author_Institution
Hughes Aircraft Company, Torrance, Calif.
Volume
17
Issue
11
fYear
1970
fDate
11/1/1970 12:00:00 AM
Firstpage
971
Lastpage
975
Abstract
Current filaments have been observed in the post-breakdown region of two-carrier space-charge-limted diodes in silicon and gallium arsenide. An analytical expression for the radial distribution of current in such filaments has been derived using an appropriate model for the total current-electric field problem. This derived expression is solved numerically for semi-insulating GaAs. These analytical results are compared with the experimental observations.
Keywords
Aerospace electronics; Charge carrier processes; Current density; Equations; Gallium arsenide; Helium; Insulation; P-i-n diodes; PIN photodiodes; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1970.17109
Filename
1476293
Link To Document