• DocumentCode
    1040949
  • Title

    Comments, with reply, on "Mechanisms determining third-order intermodulation distortion in AlGaAs/GaAs heterojunction bipolar transistors" by A. Samelis and D. Pavlidis

  • Author

    Maas, S.A. ; Nelson, B. ; Tait, D.

  • Author_Institution
    Nonlinear Consulting, Long Beach, CA, USA
  • Volume
    41
  • Issue
    11
  • fYear
    1993
  • Firstpage
    2038
  • Lastpage
    2039
  • Abstract
    The commenters maintain that the above-titled paper by A. Samelis and D, Pavlidis (ibid., vol.40, no.12, p.2374, Dec. 1992) seriously misrepresents their own work (ibid., vol.40, no.3, p.442, Mar. 1992), and they provide arguments countering the two statements to which they object. The original authors rebut the commenters´ arguments.<>
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; intermodulation; semiconductor device models; solid-state microwave devices; AlGaAs-GaAs; AlGaAs/GaAs heterojunction bipolar transistors; HBT; model; third-order intermodulation distortion; Capacitance; FETs; Frequency; Gallium arsenide; Heterojunctions; Intermodulation distortion; Microwave devices; Microwave technology; Microwave theory and techniques; Testing;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.273434
  • Filename
    273434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1040949