• DocumentCode
    1040975
  • Title

    Integration of n- and p-channel InGaP=InGaAs doped-channel pseudomorphic HFETs

  • Author

    Tsai, J.H. ; Li, C.-M. ; Liu, W.C. ; Guo, D.F. ; Chiu, S.Y. ; Lour, W.S.

  • Author_Institution
    Nat. Kaohsiung Normal Univ., Kaohsiung
  • Volume
    43
  • Issue
    13
  • fYear
    2007
  • Firstpage
    732
  • Lastpage
    734
  • Abstract
    n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs on the identical chip by selectively etching process are first demonstrated. Particularly, the saturation voltage of the n-channel device is relatively small because 2DEG is formed and modulated in the InGaAs strain channel. Experimentally, an extrinsic transconductance of 292 (72) mS/mm and a saturation current density of 335 (-270) mA/mm are obtained for the n-channel (p-channel) device. Furthermore, the integrated devices exhibit broad gate voltage swings for linear and signal amplifier applications.
  • Keywords
    III-V semiconductors; high electron mobility transistors; semiconductor doping; extrinsic transconductance; n-channel doped-channel pseudomorphic HFETs; p-channel doped-channel pseudomorphic HFETs; saturation current density; strain channel;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20070621
  • Filename
    4263108
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1040975