DocumentCode
1041242
Title
Edge breakdown in mesa diodes
Author
Lekholm, Anders ; Weissglas, Peter
Author_Institution
Microwave Institute, Stockholm, Sweden
Volume
18
Issue
10
fYear
1971
fDate
10/1/1971 12:00:00 AM
Firstpage
844
Lastpage
848
Abstract
An analysis of the current flow in a mesa diode shows that this diode suffers from similar limitations in breakdown voltage as the planar diode due to radial current flow at the diode edge. A theoretical analysis of the breakdown voltage of this structure shows that careful tailoring of the doping profile is essential to obtain bulk breakdown in IMPATT and TRAPATT mesa diodes. Experimental results from a great number of wafers strongly support this theoretical model. Band bending at the surface or microplasmas due to point defects do not satisfactorily explain the too low or badly defined breakdowns observed in our mesa diodes.
Keywords
Breakdown voltage; Diodes; Doping profiles; Electric breakdown; Etching; Plasma applications; Pollution measurement; Semiconductor device modeling; Semiconductor process modeling; Surface contamination;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1971.17294
Filename
1476616
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