• DocumentCode
    1041272
  • Title

    GaAs LSA V-band oscillators

  • Author

    Barrera, Joseph S.

  • Author_Institution
    Hewlett-Packard Laboratories, Palo Alto, Calif.
  • Volume
    18
  • Issue
    10
  • fYear
    1971
  • fDate
    10/1/1971 12:00:00 AM
  • Firstpage
    866
  • Lastpage
    872
  • Abstract
    GaAs devices verify practical LSA mode operation at V-band frequencies (50-75 GHz). The limitations on power and efficiency are characterized including the dependence of efficiency on electron concentration. The maximum CW power level is 62 mW with an efficiency of 2.2 percent at 64 GHz. The peak power and efficiency is 137 mW and 3.71 percent at 64 GHz for 5 percent duty, pulsed operation. A maximum in the CW efficiency occurs at an n/f ratio of 1.1 × 105s . cm-3corresponding to a doping of 6.6 × 1015cm-3for a frequency of 60 GHz. Device design curves are presented for CW operation subject to Copeland´s LSA mode criteria and to a maximum allowed sample temperature rise. Details of a vane circuit are presented which provide V-band resonances and a proper RF environment for LSA-related operation.
  • Keywords
    Bonding; Doping; Gallium arsenide; Heat sinks; Oscillators; Performance analysis; Temperature distribution; Thermal conductivity; Threshold current; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1971.17297
  • Filename
    1476619