Monitoring SEU parameters at reduced bias [CMOS SRAM]

Author

Roth, D.R. ; McNulty, P.J. ; Abdel-Kader, W.G. ; Strauss, L. ; Stassinopoulos, E.G.

Author_Institution

Dept. of Phys. & Astron., Clemson Univ., SC, USA

Volume

40

Issue

6

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

1721

Lastpage

1724

Abstract

SEU (single event upset) sensitivity of a CMOS SRAM (static random-access memory) increases with decreasing bias in such a manner that the critical charge exhibits a linear dependence on bias. This should allow proton and neutron monitoring of SEU parameters even for radiation-hardened devices. The sensitivity of SEU rates to the thickness of the sensitive volume is demonstrated, and procedures for determining the SEU parameters using protons are outlined. A method for determining the thickness of the sensitive volume using SEU measurements at normal and grazing incidence has been developed. Values determined by this procedure agree with values obtained with large collection measurements, SEM measurements, and estimates from the thickness of the epi-layer

Keywords

CMOS integrated circuits; SRAM chips; integrated circuit testing; proton effects; radiation hardening (electronics); CMOS SRAM; SEU parameters; SEU sensitivity; critical charge; grazing incidence; neutron monitoring; proton monitoring; radiation-hardened devices; reduced bias; sensitive volume; threshold LET; Condition monitoring; Hardware; Laboratories; Manufacturing; Neutrons; Power supplies; Protocols; Protons; Random access memory; System testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.273487

Filename

273487