DocumentCode
1042141
Title
GaAs planar Gunn diodes for DC-biased operation
Author
Takeuchi, M. ; Higashisaka, A. ; Sekido, K.
Author_Institution
Nippon Electric Company, Ltd., Kawasaki, Japan
Volume
19
Issue
1
fYear
1972
fDate
1/1/1972 12:00:00 AM
Firstpage
125
Lastpage
127
Abstract
The difficulty in obtaining CW oscillations in GaAs planar Gunn diodes has been found to be due to distortion of the field distribution by a field-enhanced trapping effect. A tapered active region is proposed to compensate for the effect due to the trapping. By adopting the geometry, coherent CW Gunn oscillations have been obtained successfully with reasonable reproducibility.
Keywords
Aging; Diodes; Doping profiles; Fabrication; Gallium arsenide; Gunn devices; Packaging; Radio frequency; Statistics; Testing;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1972.17383
Filename
1476854
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