DocumentCode
1042373
Title
On the removal of the memory properties of MNOS devices
Author
Kendall, E.J.M. ; Haslett, J.W.
Author_Institution
University of Calgary, Alta., Canada
Volume
19
Issue
2
fYear
1972
fDate
2/1/1972 12:00:00 AM
Firstpage
287
Lastpage
288
Abstract
Results are presented to support the contention that the memory properties of MNOS and MNS devices are due to crystalline areas in the nitride. The memory effect was found to disappear when the crystalline areas were removed by ion implantation techniques.
Keywords
Capacitance-voltage characteristics; Crystallization; Electron traps; Frequency; Hysteresis; Ion implantation; Semiconductor films; Silicon; Switches; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1972.17409
Filename
1476880
Link To Document