DocumentCode
1043167
Title
Improvement of voltage linearity in high-/spl kappa/ MIM capacitors using HfO2-SiO2 stacked dielectric
Author
Sun Jung Kim ; Byung Jin Cho ; Ming-Fu Li ; Shi-Jin Ding ; Chunxiang Zhu ; Ming Bin Yu ; Narayanan, B. ; Chin, A. ; Dim-Lee Kwong
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Volume
25
Issue
8
fYear
2004
Firstpage
538
Lastpage
540
Abstract
It is demonstrated that the voltage coefficients of capacitance (VCC) in high-/spl kappa/ metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-/spl kappa/ and SiO2 dielectrics. A MIM capacitor with capacitance density of 6 fFμm2 and quadratic VCC of only 14 ppm/V2 has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm /spl deg/C) as well as low leakage current of less than 10 nA/cm2 up to 4 V at 125 /spl deg/C.
Keywords
MIM devices; capacitance; dielectric thin films; hafnium compounds; leakage currents; silicon compounds; thin film capacitors; 125 C; 4 V; HfO/sub 2/-SiO/sub 2/; HfO/sub 2/-SiO/sub 2/ stacked dielectric; analog/mixed-signal IC; capacitance density; high-/spl kappa/ MIM capacitors; high-/spl kappa/ dielectrics; leakage current; metal-insulator-metal capacitors; quadratic VCC; stacked insulator structure; temperature coefficients; temperature dependence; voltage coefficients of capacitance; voltage linearity; Capacitance; Dielectrics and electrical insulation; Frequency; Hafnium oxide; Linearity; MIM capacitors; Maintenance engineering; Metal-insulator structures; Temperature dependence; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2004.832785
Filename
1317018
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