DocumentCode
1043226
Title
PSG masks for diffusions in gallium arsenide
Author
Baliga, Jayant B. ; Ghandhi, Sorab K.
Author_Institution
Rensselaer Polytechnic Institute, Troy, N. Y.
Volume
19
Issue
6
fYear
1972
fDate
6/1/1972 12:00:00 AM
Firstpage
761
Lastpage
764
Abstract
This paper describes the use of phosphosilicate glass (PSG) films as an effective mask against zinc and tin diffusions in gallium arsenide. It is shown that films with a high phosphorus pentoxide content (as much as 30 percent by weight) can be used to obtain adequate crack-free masks against these dopants. Effective masking was obtained for diffusion depths (unmasked regions) up to 10 µ.
Keywords
Argon; Fabrication; Gallium arsenide; Glass; Oxidation; Silicon compounds; Substrates; Temperature; Tin; Zinc;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1972.17492
Filename
1476963
Link To Document